The Effect of Inductively Coupled Plasma Etching on the I – V Curves of the Avalanche Photodiode with GaN/AlN Periodically Stacked Structure-Reference-Cited by-同舟云学术

The Effect of Inductively Coupled Plasma Etching on the I – V Curves of the Avalanche Photodiode with GaN/AlN Periodically Stacked Structure

Published:2019-11-07 Issue:24 Volume:216 Page:1900655
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Wu Xingzhao¹^ORCID,Wang Lai¹,Hao Zhibiao¹,Han Yanjun¹,Sun Changzheng¹,Xiong Bing¹,Wang Jian¹,Li Hongtao¹,Luo Yi¹,Brault Julien²,Khalfioui Mohamed Al²,Nemoz Maud²,Li Mo³,Kang Jianbin³,Li Qian³

Affiliation:

1. Beijing National Research Center for Information Science and Technology, Department of Electronic EngineeringTsinghua University Beijing 100084 China

2. Université Côte d'Azur, CNRS, CRHEA rue B. Grégory Valbonne 06560 France

3. Microsystem & Terahertz Research CenterChina Academy of Engineering Physics Chengdu 610200 China

Funder

Science Challenge Project

National Natural Science Foundation of China

China Postdoctoral Science Foundation

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900655

Reference25 articles.

1. Light Extraction Enhancement of GaN-Based Light-Emitting Diodes With Textured Sidewalls and ICP-Transferred Nanohemispherical Backside Reflector

2. Low propagation loss in GaN/AlGaN-based ridge waveguides

3. p-i-p-i-n Separate Absorption and Multiplication Ultraviolet Avalanche Photodiodes

4. Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Experimental observation of the linear gain of back-illuminated ultraviolet avalanche photodiodes using a GaN/AlN periodically stacked structure;Journal of Physics D: Applied Physics;2021-05-10