A method of applying compressive pre-stress to AlGaN barrier in AlGaN/GaN heterostructures by depositing an additional thermally mismatched dielectric-Reference-Cited by-同舟云学术

A method of applying compressive pre-stress to AlGaN barrier in AlGaN/GaN heterostructures by depositing an additional thermally mismatched dielectric

Published:2016-04-28 Issue:9 Volume:213 Page:2474-2478
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Liu Yanli¹²,Chen Dunjun¹,Yang Lianhong³,Lu Hai¹,Zhang Rong¹,Zheng Youdou¹

Affiliation:

1. Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering; Nanjing University; Nanjing 210093 P.R. China

2. School of Information and Electronic Engineering; Shandong Technology and Business University; Yantai 264005 P.R. China

3. Department of Physics; Changji College; Changji 831100 P.R. China

Funder

National 973 project, China

National Natural Science Foundation of China

Natural Science Foundation

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference33 articles.

1. AlGaN/GaN HEMTs-an overview of device operation and applications

2. AlGaN/GaN HFET power amplifier integrated with microstrip antenna for RF front-end applications

3. GaN-Based RF Power Devices and Amplifiers

4. A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs

5. Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives

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