Characterisation of intrinsic silicon oxide absorber layers for use in silicon thin film solar cells-Reference-Cited by-同舟云学术

Characterisation of intrinsic silicon oxide absorber layers for use in silicon thin film solar cells

Published:2015-05-04 Issue:9 Volume:212 Page:2068-2073
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Holinski Sven¹,Borchert Dietmar¹,Hohage Stefan¹,Meiners Britt-Marie¹,Schäfer Petra¹

Affiliation:

1. Fraunhofer Institute for Solar Energy Systems (ISE); Laboratory- and Servicecenter Gelsenkirchen; Gelsenkirchen Germany

Funder

European Union, European Fond

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201532208/fullpdf

Reference32 articles.

1. Theoretical Analysis of Amorphous Silicon Alloy Based Triple Junction Solar Cells

2. Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells

3. Detailed balance limit of the efficiency of tandem solar cells

4. Low-mobility solar cells: a device physics primer with application to amorphous silicon

5. Film and Solar Cell Properties of a-SiC:H Alloys

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