Enhanced threshold voltage of Zn-doped Ge2Sb2Te5phase-change memory deposited by electron-beam evaporation-Reference-Cited by-同舟云学术

Enhanced threshold voltage of Zn-doped Ge2Sb2Te5phase-change memory deposited by electron-beam evaporation

Published:2013-09-24 Issue:12 Volume:210 Page:2650-2655
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Li Rui¹²,Jiang Yifan¹,Xu Ling¹,Ma Zhongyuan¹,Yang Fei¹,Xu Jun¹,Su Weining³

Affiliation:

1. National Laboratory of Solid State Microstructures and School of Electronic Science and Engineering; Nanjing University; Nanjing 210093 P. R. China

2. College of Electronic Science and Engineering; Nanjing University of Posts and Telecommunications; Nanjing 210003 P. R. China

3. National Laboratory of Solid State Microstructures, Department of Physics; Nanjing University; Nanjing 210093 P. R. China

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. Determination of optical parameters of GeTe semiconductor films after thermal treatment

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3. Microstructure-property relationship in nitrogen-doped Ge<formula><inf><roman>2</roman></inf></formula>Sb<formula><inf><roman>2</roman></inf></formula>Te<formula><inf><roman>5</roman></inf></formula> phase-change optical recording media

4. Optical and recording properties of short wavelength optical storage materials

5. Sb-rich Si-Sb-Te phase change material for multilevel data storage: The degree of disorder in the crystalline state

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