Improvement of the growth stability for large diameter Si-float zone crystals by controlling the gas flow-Reference-Cited by-同舟云学术

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Improvement of the growth stability for large diameter Si-float zone crystals by controlling the gas flow

Published:2014-09-02 Issue:11 Volume:211 Page:2471-2474
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Rost Hans-Joachim¹,Menzel Robert¹,Riemann Helge¹,Wuenscher Michael¹,Haufe Sandra²

Affiliation:

1. Leibniz Institute for Crystal Growth; Max-Born-Strasse 2 12489 Berlin Germany

2. Humboldt- University; Institute of Physics; Newtonstrasse 15 12489 Berlin Germany

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Float-Zone silicon crystal growth at reduced RF frequencies

2. Influence of reduced working frequencies on the floating-zone growth of silicon single crystals

3. Gas flow effect on global heat transport and melt convection in Czochralski silicon growth

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 3D modeling of doping from the atmosphere in floating zone silicon crystal growth;Journal of Crystal Growth;2017-01

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