Polarization Dependence of Photoluminescence from InAs Quantum Dots Grown on InP(311)B Substrates Using Digital Embedding Method-Reference-Cited by-同舟云学术

Polarization Dependence of Photoluminescence from InAs Quantum Dots Grown on InP(311)B Substrates Using Digital Embedding Method

Published:2018-01-10 Issue:8 Volume:215 Page:1700418
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Akahane Kouichi¹,Yamamoto Hiroyuki²,Matsumoto Atsushi¹,Umezawa Toshimasa¹,Sotobayashi Hideyuki²,Yamamoto Naokatsu¹

Affiliation:

1. National Institute of Information and Communications Technology; 4-2-1, Nukuikita-machi Koganei Tokyo 184-8795 Japan

2. Aoyama Gakuin University; Sagamihara Kanagawa 252-5258 Japan

Funder

Science of hybrid quantum systems

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Multidimensional quantum well laser and temperature dependence of its threshold current

2. Lasing at three-dimensionally quantum-confined sublevel of self-organized In/sub 0.5/Ga/sub 0.5/As quantum dots by current injection

3. Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition

4. High-gain quantum-dot semiconductor optical amplifier for 1300 nm

5. Recent progress in self-assembled quantum-dot optical devices for optical telecommunication: temperature-insensitive 10 Gb s−1directly modulated lasers and 40 Gb s−1signal-regenerative amplifiers

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1. Comparative optical studies of InAlAs/InP quantum wells grown by MOCVD on (311)A and (311)B InP planes;Journal of Materials Science: Materials in Electronics;2020-05-29