The vacancy-hydrogen defect in diamond: A computational study-Reference-Cited by-同舟云学术

The vacancy-hydrogen defect in diamond: A computational study

Published:2015-07-29 Issue:11 Volume:212 Page:2431-2436
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Peaker C. V.¹,Goss J. P.¹,Briddon P. R.¹,Horsfall A. B.¹,Rayson M. J.²

Affiliation:

1. Electrical and Electronic Engineering, Newcastle University; NE1 7RU UK

2. Department of Chemistry, University of Surrey, Guildford, Surrey; GU2 7XH UK

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference27 articles.

1. Vacancy-impurity complexes and limitations for implantation doping of diamond

2. A study of the mobility and trapping of minor hydrogen concentrations in diamond in three dimensions using quantitative ERDA microscopy

3. N. H. Nickel

4. Impurity and defect incorporation in diamond films deposited at low substrate temperatures

5. Hydrogen Incorporation in Diamond: The Nitrogen-Vacancy-Hydrogen Complex

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