Optimization of n-electrode pattern for p-side down vertical InGaN/GaN blue light emitting diodes-Reference-Cited by-同舟云学术

Optimization of n-electrode pattern for p-side down vertical InGaN/GaN blue light emitting diodes

Published:2014-05-16 Issue:9 Volume:211 Page:2134-2141
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Kumar Sandeep¹²,Singh Sumitra¹²,Lunia Ashok Kumar¹²,Pal Suchandan¹²,Dhanavantri C.¹²

Affiliation:

1. CSIR-Network of Institutes for Solar Energy (CSIR-NISE); India

2. Opto-Electronic Devices Group; CSIR-Central Electronics Engineering Research Institute (CSIR-CEERI); Pilani 333031 Rajasthan India

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Light-Emitting Diodes

2. The Blue Laser Diode

3. Effects of Different n-Electrode Patterns on Optical Characteristics of Large-Area p-Side-Down InGaN Light-Emitting Diodes Fabricated by Laser Lift-Off

4. Study on the Current Spreading Effect and Light Extraction Enhancement of Vertical GaN/InGaN LEDs

5. High power light-emitting diode junction temperature determination from current-voltage characteristics

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