Improved charge carrier mobility in copper phthalocyanine based field effect transistors by insertion of a thin poorly conducting layer as gate insulator extension-Reference-Cited by-同舟云学术

Improved charge carrier mobility in copper phthalocyanine based field effect transistors by insertion of a thin poorly conducting layer as gate insulator extension

Published:2015-07-30 Issue:12 Volume:212 Page:2759-2765
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Jastrombek Diana¹,Tavares Ana C. B.¹,Meruvia Michelle S.²,Koehler Marlus¹,Hümmelgen Ivo A.¹

Affiliation:

1. Departamento de Física; Universidade Federal do Paraná; Caixa Postal 19044 81531-990 Curitiba-PR Brazil

2. Programa de Pós-Graduação em Engenharia Mecânica; Pontifícia Universidade Católica do Paraná; 80215-901 Curitiba-PR Brazil

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference36 articles.

1. Transition from bulk transport to surface transport in organic field effect transistors

2. Double-gate organic thin-film transistor using a photosensitive polymer as the dielectric layer

3. The dielectric behaviour of temperature-induced crosslinking of Cr(III)-doped poly(vinyl alcohol)

4. Study of poly(3-hexylthiophene)/cross-linked poly(vinyl alcohol) as semiconductor/insulator for application in low voltage organic field effect transistors

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