Experimental study of iron redistribution between bulk defects and boron doped layer in silicon wafers-Reference-Cited by-同舟云学术

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Experimental study of iron redistribution between bulk defects and boron doped layer in silicon wafers

Published:2011-07-06 Issue:10 Volume:208 Page:2430-2436
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Talvitie Heli,Yli-Koski Marko,Haarahiltunen Antti,Vähänissi Ville,Asghar Muhammad Imran,Savin Hele

Funder

Finnish National Technology Agency

Academy of Finland

Micro Analog Systems Oy

Okmetic Oyj

Endeas Oy

Semilab Inc.

VTI Technologies Oy

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201026534/fullpdf

Reference36 articles.

1. Intrinsic gettering by oxide precipitate induced dislocations in Czochralski Si

2. Mechanism of internal gettering of interstitial impurities in Czochralski-grown silicon

3. Intrinsic Gettering of Iron Impurities in Silicon Wafers

4. Fundamental properties of intrinsic gettering of iron in a silicon wafer

5. A study of gettering efficiency and stability in Czochralski silicon

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Gettering in silicon photovoltaics: A review;Solar Energy Materials and Solar Cells;2022-01

2. Gettering of Iron in Silicon Solar Cells With Implanted Emitters;IEEE Journal of Photovoltaics;2014-01

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