Microstructural, Optical, and Electrical Properties of Chemically Deposited Tin Antimony Sulfide Thin Films for Use in Optoelectronic Devices-Reference-Cited by-同舟云学术

Microstructural, Optical, and Electrical Properties of Chemically Deposited Tin Antimony Sulfide Thin Films for Use in Optoelectronic Devices

Published:2020-03-13 Issue:9 Volume:217 Page:1900881
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Akata Nwofe Patrick¹²^ORCID,Sugiyama Mutsumi¹

Affiliation:

1. Faculty of Science and TechnologyDepartment of Electrical EngineeringTokyo University of Science 20641 Yamazaki Noda 278-8510 Japan

2. Faculty of ScienceDepartment of Industrial PhysicsEbonyi State University P.M.B 051 Abakaliki Nigeria

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900881

Reference33 articles.

1. Fabrication and characterization of 150 nm tin antimony sulfide thin films, a promising window layer material for homojunction solar cells

2. Large-grained Sb2S3 thin films with Sn-doping by chemical bath deposition for planar heterojunction solar cells

3. Substrate Temperature-Dependent Physical Properties of Thermally Evaporated Sn4Sb6S13 Thin Films

4. Electrical characterization of SnSb4S7 thin films by impedance spectroscopy

5. The effect of annealing in N2 atmosphere on the physical properties of SnSb4S7 thin films

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