Photoluminescence Intensity Enhancement of Single Silicon Quantum Dots on a Metal Membrane with a Spacer-Reference-Cited by-同舟云学术

Photoluminescence Intensity Enhancement of Single Silicon Quantum Dots on a Metal Membrane with a Spacer

Published:2019-11-20 Issue:4 Volume:217 Page:1900575
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Zhou Jingjian¹^ORCID,Pevere Federico¹,Gatty Hithesh K.²,Linnros Jan¹,Sychugov Ilya¹

Affiliation:

1. Department of Applied PhysicsKTH – Royal Institute of Technology Electrum 229 (B4) Kista 164 40 Sweden

2. Ångström LaboratoryUppsala University Uppsala 75105 Sweden

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900575

Reference25 articles.

1. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers

2. Probing silicon quantum dots by single-dot techniques

3. Breakdown of thek-Conservation Rule in Si Nanocrystals

4. Light-Emitting Diodes Based on Colloidal Silicon Quantum Dots with Octyl and Phenylpropyl Ligands

5. High-Efficiency Silicon Nanocrystal Light-Emitting Devices

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