Etching SiC-slurry and diamond wire-sawn silicon wafers with HF-HCl-Cl2mixtures: Parameter influences on etch rates and surface structures-Reference-Cited by-同舟云学术

Etching SiC-slurry and diamond wire-sawn silicon wafers with HF-HCl-Cl2mixtures: Parameter influences on etch rates and surface structures

Published:2017-06-07 Issue:10 Volume:214 Page:1700152
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Stapf André¹,Nattrodt Peter¹,Gondek Christoph¹,Kroke Edwin¹

Affiliation:

1. Institute of Inorganic Chemistry; Technische Universität Bergakademie Freiberg; Leipziger Str. 29 D-09599 Freiberg Germany

Funder

European Regional Development Fund

Ministry of Science and Art of Saxony

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201700152/fullpdf

Reference22 articles.

1. Effect of texturing process involving saw-damage etching on crystalline silicon solar cells

2. Improvement on surface texturing of single crystalline silicon for solar cells by saw-damage etching using an acidic solution

3. Ultraclean Surface Processing of Silicon Wafers

4. F. Buchholz E. Wefringhaus S. Eisert H. Egenolf A. Groß 2011

5. Texturing of SiC-slurry and diamond wire sawn silicon wafers by HF–HNO3–H2SO4 mixtures

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Exploration of methods to remove implanted 210Pb and 210Po contamination from silicon surfaces;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2023-03

2. Photoanodic pyramid texturization of n-Ge(100) in HCl solution: unexpected anisotropy in the surface chemistry of etching;Journal of Materials Chemistry C;2019

3. On The Mechanism of the Anisotropic Dissolution of Silicon in Chlorine Containing Hydrofluoric Acid Solutions;Journal of The Electrochemical Society;2017-12-06