Charge trapping and physical parameters of Er3+ doped light-emitting field-effect transistors-Reference-Cited by-同舟云学术

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Charge trapping and physical parameters of Er3+ doped light-emitting field-effect transistors

Published:2014-01-22 Issue:2 Volume:211 Page:467-471
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Ramírez J. M.¹,Berencén Y.¹,Garrido B.¹

Affiliation:

1. MIND-IN2UB, Departament d'Electrònica; Universitat de Barcelona; 1 Martí i Franquès Barcelona 08028 Spain

Funder

Spanish Ministry of Science

AGAUR

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201300343/fullpdf

Reference18 articles.

1. Field-effect electroluminescence in silicon nanocrystals

2. Electroluminescence of silicon nanocrystals in MOS structures

3. Light emitting field effect transistor with two self-aligned Si nanocrystal layers

4. Metal-nitride-oxide-semiconductor light-emitting devices for general lighting

5. Direct modulation of electroluminescence from silicon nanocrystals beyond radiative recombination rates

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