Hydrogen influence on the electrical properties of sputtered InN thin films-Reference-Cited by-同舟云学术

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Hydrogen influence on the electrical properties of sputtered InN thin films

Published:2013-04-17 Issue:8 Volume:210 Page:1606-1611
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Sparvoli Marina¹,Mansano Ronaldo D.¹,Chubaci José F. D.²

Affiliation:

1. Departamento de Engenharia Elétrica; Escola Politécnica da Universidade de São Paulo; São Paulo; 05508-900; Brazil

2. Instituto de Física da Universidade de São Paulo; São Paulo; 05314-970; Brazil

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. W. Walukiewicz 2006

2. Sources of unintentional conductivity in InN

3. Evidence forp-Type Doping of InN

4. Investigating the role of hydrogen in indium oxide tubular nanostructures as a donor or oxygen vacancy passivation center

5. M. Alevli 2008

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Sol–gel spin coating growth of magnesium-doped indium nitride thin films;Vacuum;2018-09

2. Epitaxial growth of semipolar InN($10\bar{1}3$) on LaAlO3substrate: Epitaxial relationship analysis;Japanese Journal of Applied Physics;2017-04-20

3. Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100);AIP Advances;2016-04

4. Nanoindentation responses of InN thin films;Journal of Alloys and Compounds;2014-10

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