Transition Metal-Doped Amorphous Oxide Semiconductor Thin-Film Phosphor, Chromium-Doped Amorphous Gallium Oxide

Author:

Ide Keisuke1,Futakado Yuki1,Watanabe Naoto1,Kim Junghwan2,Katase Takayoshi13,Hiramatsu Hidenori12,Hosono Hideo12,Kamiya Toshio12

Affiliation:

1. Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology; 4259 Nagatsuta-cho, Midori-ku Yokohama 226-8503 Japan

2. Materials Research Center for Element Strategy, Tokyo Institute of Technology; 4259 Nagatsuta-cho, Midori-ku Yokohama 226-8503 Japan

3. PRESTO, Japan Science and Technology Agency; 7 Gobancho, Chiyoda-ku Tokyo 102-0076 Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology

Grant-in-Aid for Scientific Research on Innovative Areas

Grant-in-Aid for Scientific Research

Support for Tokyotech Advanced Research

Grant-in-Aid for Young Scientists

PRESTO, JST

Grant-in-Aid for Young Scientists A

Grant-in-Aid for Challenging Exploratory Research

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

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