Source-gating effect in hydrothermally grown ZnO nanowire transistors-Reference-Cited by-同舟云学术

Source-gating effect in hydrothermally grown ZnO nanowire transistors

Published:2016-04-18 Issue:9 Volume:213 Page:2438-2445
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Opoku Charles¹,Dahiya Abhishek Singh¹,Poulin-Vittrant Guylaine²,Camara Nicolas¹,Alquier Daniel¹

Affiliation:

1. Université François Rabelais de Tours, CNRS; GREMAN UMR 7347, 16 rue Pierre et Marie Curie 37071 Tours Cedex 2 France

2. Université François Rabelais de Tours, INSA-CVL; CNRS, GREMAN UMR 7347, 3 rue de la Chocolaterie, CS 23410 41034 Blois Cedex France

Funder

Region Center CEZnO project

MEPSFlexible

ANR FLEXIBLE

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201533080/fullpdf

Reference45 articles.

1. Direct Observation of Nanoscale Size Effects in Ge Semiconductor Nanowire Growth

2. Direct Observation of Nanoscale Size Effects in Ge Semiconductor Nanowire Growth

3. Observation of strongly entangled photon pairs from a nanowire quantum dot

4. Ultrafast plasmonic nanowire lasers near the surface plasmon frequency

5. Hole Spin Coherence in a Ge/Si Heterostructure Nanowire

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