Effect of N Concentration Upon Resistive Switching Behavior of Au/Ni/TaON/NiSi ECM Devices-Reference-Cited by-同舟云学术

Effect of N Concentration Upon Resistive Switching Behavior of Au/Ni/TaON/NiSi ECM Devices

Published:2018-08-26 Issue:23 Volume:215 Page:1800181
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Park Jingyu¹,Jeon Heeyoung¹,Jang Woochool²,Kim Hyunjung³,Kim Hongki¹,Jeon Hyeongtag²³^ORCID

Affiliation:

1. R&D Division; SK Hynix, Inc.; 2091, Gyeongchung-daero, Bubal-eub Icheon-si Gyeonggi-Do 167-701 Korea

2. Division of Materials Science and Engineering; Hanyang University; Seoul 133-791 Korea

3. Department of Nanoscale Semiconductor Engineering; Hanyang University; Seoul 133-791 Korea

Funder

Korean government

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201800181/fullpdf

Reference14 articles.

1. Nanoionics-based resistive switching memories

2. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

3. Resistive switching in transition metal oxides

4. Observation of conducting filament growth in nanoscale resistive memories

5. Bipolar Resistive Switching Memory Using Cu Metallic Filament in Ge[sub 0.4]Se[sub 0.6] Solid Electrolyte

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