Design of p-CuO/n-ZnO heterojunctions by rf magnetron sputtering-Reference-Cited by-同舟云学术

Design of p-CuO/n-ZnO heterojunctions by rf magnetron sputtering

Published:2013-03-20 Issue:7 Volume:210 Page:1386-1391
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Saji Kachirayil J.¹,Populoh Sascha²,Tiwari Ayodhya N.¹,Romanyuk Yaroslav E.¹

Affiliation:

1. Laboratory for Thin Films and Photovoltaics; Empa - Swiss Federal Laboratories for Materials Science and Technology; 8600 Dübendorf Switzerland

2. Laboratory for Solid State Chemistry and Catalysis; Empa - Swiss Federal Laboratories for Materials Science and Technology; 8600 Dübendorf Switzerland

Funder

Swiss National Science Foundation

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201228293/fullpdf

Reference40 articles.

1. Fabrication and photoresponse of a pn-heterojunction diode composed of transparent oxide semiconductors, p-NiO and n-ZnO

2. Photovoltaic effect observed in transparent p–n heterojunctions based on oxide semiconductors

3. Transparent thin film transistors using ZnO as an active channel layer and their electrical properties

4. ZnO-based transparent thin-film transistors

5. Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering

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