Effects of the Temperature Gradient Near the Crystal-Melt Interface in Top Seeded Solution Growth of SiC Crystal-Reference-Cited by-同舟云学术

Effects of the Temperature Gradient Near the Crystal-Melt Interface in Top Seeded Solution Growth of SiC Crystal

Published:2018-04-30 Issue:20 Volume:215 Page:1701017
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Ha Minh-Tan¹²^ORCID,Shin Yun-Ji¹,Lee Myung-Hyun¹,Kim Cheol-Jin²,Jeong Seong-Min¹^ORCID

Affiliation:

1. Korea Institute of Ceramic Engineering and Technology; 101 Soho-ro Jinju-si Gyeongsangnam-do 52851 Korea

2. Gyeongsang National University; 501 Jinju-daero Jinju-si Gyeongsangnam-do 52828 Korea

Funder

Ministry of Trade, Industry and Energy

Strategic Core Materials Technology Development Program

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201701017/fullpdf

Reference37 articles.

1. High-Efficiency Power Conversion Using Silicon Carbide Power Electronics

2. SiC versus Si—Evaluation of Potentials for Performance Improvement of Inverter and DC–DC Converter Systems by SiC Power Semiconductors

3. Investigation of growth processes of ingots of silicon carbide single crystals

4. Bulk growth of SiC - review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution

5. High temperature chemical vapor deposition of SiC

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