Plasma-assisted molecular beam epitaxy of Sn-doped In2 O3 : Sn incorporation, structural changes, doping limits, and compensation-Reference-Cited by-同舟云学术

Plasma-assisted molecular beam epitaxy of Sn-doped In2 O3 : Sn incorporation, structural changes, doping limits, and compensation

Published:2013-10-28 Issue:1 Volume:211 Page:48-53
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Bierwagen Oliver¹²,Speck James S.²

Affiliation:

1. Paul-Drude-Institut für Festkörperelektronik; Hausvogteiplatz 5-7 10117 Berlin Germany

2. Materials Department; University of California; Santa Barbara California 93106 USA

Funder

National Science Foundation NSF MWN Program

NSF

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201330224/fullpdf

Reference28 articles.

1. Untersuchungen der elektrischen und lichtelektrischen Leitf�higkeit d�nner Indiumoxydschichten

2. Transparent conductors—A status review

3. Surface Electron Accumulation and the Charge Neutrality Level inIn2O3

4. Carrier-controlled ferromagnetism in transparent oxide semiconductors

5. Control of Ferromagnetism via Electron Doping inIn2O3∶Cr

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