Microstructural evolution of a recrystallized Fe-implanted InGaAsP/InP heterostructure-Reference-Cited by-同舟云学术

Microstructural evolution of a recrystallized Fe-implanted InGaAsP/InP heterostructure

Published:2015-03-27 Issue:9 Volume:212 Page:1888-1896
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Fekecs André¹,Korinek Andreas²,Chicoine Martin³⁴,Ilahi Bouraoui¹,Schiettekatte François³⁴,Morris Denis¹⁴,Arès Richard¹⁴

Affiliation:

1. Institut Interdisciplinaire d'Innovation Technologique (3IT), and Laboratoire Nanotechnologies Nanosystèmes (LN2)-CNRS UMI-3463; Université de Sherbrooke; 3000 boul. de l'Université Sherbrooke QC Canada J1K OA5

2. Department of Materials Science and Engineering, and Canadian Centre for Electron Microscopy; McMaster University; 1280 Main Street West Hamilton ON Canada L8S 4M1

3. Département de Physique; Université de Montréal; C.P. 6128, Succursale Centre-Ville Montréal QC Canada H3C 3J7

4. Regroupement Québécois sur les Matériaux de Pointe (RQMP); QC Canada

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201532006/fullpdf

Reference53 articles.

1. Ion-implanted In0.53Ga0.47As for ultrafast optoelectronic applications

2. Highly Resistive and Ultrafast Fe-Ion Implanted InGaAs for the Applications of THz Photomixer and Photoconductive Switch

3. Fabrication of high resistivity cold-implanted InGaAsP photoconductors for efficient pulsed terahertz devices

4. Fe-implanted InGaAs terahertz emitters for 1.56μm wavelength excitation

5. Fe-implanted InGaAs photoconductive terahertz detectors triggered by 1.56μm femtosecond optical pulses

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1. Ultrafast photocarrier dynamics in Fe-implanted InGaAs polycrystalline photoconductive materials;Journal of Physics: Condensed Matter;2021-07-20

2. Terahertz Emitters and Detectors Made on High-Resistivity InGaAsP:Fe Photoconductors;IEEE Transactions on Terahertz Science and Technology;2016

3. Critical process temperatures for resistive InGaAsP/InP heterostructures heavily implanted by Fe or Ga ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2015-09