Heterostructures of GaN with SiC and ZnO enhance carrier stability and separation in framework semiconductors-Reference-Cited by-同舟云学术

Heterostructures of GaN with SiC and ZnO enhance carrier stability and separation in framework semiconductors

Published:2017-03-09 Issue:4 Volume:214 Page:1600440
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Farrow Matthew R.¹,Buckeridge John¹,Lazauskas Tomas¹,Mora-Fonz David¹,Scanlon David O.¹²,Catlow C. Richard A.¹³⁴,Woodley Scott M.¹,Sokol Alexey A.¹

Affiliation:

1. Department of Chemistry; Kathleen Lonsdale Materials Chemistry; University College London, 20 Gordon Street; London WC1H 0AJ UK

2. Diamond Light Source Ltd., Diamond House; Harwell Science and Innovation Campus; Didcot Oxfordshire OX11 0DE, UK

3. The UK Catalysis Hub, Research Complex at Harwell; Rutherford Appleton Laboratory; Didcot OX11 0FA UK

4. Cardiff Catalysis Institute; School of Chemistry, Cardiff University, Main Building, Park Place; Cardiff CF10 3AT UK

Funder

Engineering and Physical Sciences Research Council

Materials Chemistry Consortium

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference53 articles.

1. Electrochemical Photolysis of Water at a Semiconductor Electrode

2. Heterogeneous photocatalyst materials for water splitting

3. GaN:ZnO Solid Solution as a Photocatalyst for Visible-Light-Driven Overall Water Splitting

4. Determination of the Nitrogen Vacancy as a Shallow Compensating Center in GaN Doped with Divalent Metals

5. Buckeridgeet al.Reply:

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