Electrical activity of (100) n-type diamond with full donor site incorporation of phosphorus-Reference-Cited by-同舟云学术

Electrical activity of (100) n-type diamond with full donor site incorporation of phosphorus

Published:2015-05-18 Issue:11 Volume:212 Page:2454-2459
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Pinault-Thaury Marie-Amandine¹,Stenger Ingrid¹,Jomard François¹,Chevallier Jacques¹,Barjon Julien¹,Traore Aboulaye²³,Eon David²³,Pernot Julien²³⁴

Affiliation:

1. Groupe d'Etude de la Matière Condensée (GEMaC), Centre National de la Recherche Scientifique (CNRS); Université de Versailles Saint Quentin en Yvelines (UVSQ); 45 avenue des Etats Unis 78035 Versailles Cedex France

2. Institut Néel; Université Grenoble Alpes; 38042 Grenoble France

3. CNRS; Institut Néel; 38042 Grenoble France

4. Institut Universitaire de France (IUF); 103 Boulevard Saint Michel 75005 Paris France

Funder

DIAMONIX 1 and DIAMONIX 2

Unique Interministerial Fund

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201532206/fullpdf

Reference34 articles.

1. Ultraviolet Emission from a Diamond pn Junction

2. Leakage current analysis of diamond Schottky barrier diode

3. Diamond for bio-sensor applications

4. High-Efficiency Excitonic Emission with Deep-Ultraviolet Light from (001)-Oriented Diamondp-i-nJunction

5. Electron Emission from a Diamond (111) p–i–n+Junction Diode with Negative Electron Affinity during Room Temperature Operation

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