Comparative study on noise characteristics of As and Sb-based high electron mobility transistors-Reference-Cited by-同舟云学术

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Comparative study on noise characteristics of As and Sb-based high electron mobility transistors

Published:2016-11-17 Issue:3 Volume:214 Page:1600599
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Takahashi Takuto¹,Hatsushiba Shota¹,Fujikawa Sachie¹,Fujishiro Hiroki I.¹

Affiliation:

1. Department of Applied Electronics; Tokyo University of Science; 6-3-1 Niijuku, Katsushika-ku Tokyo 125-8585 Japan

Funder

Grant-in-Aid for Scientific Research (C)

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference34 articles.

1. T. Takegishi H. Watanabe R. Yamada T. Matsumoto S. Hara H. I. Fujishiro 2009 124 127

2. Theoretical Study on Performance Limit of Cutoff Frequency in Nano-Scale InAs HEMTs Based on Quantum-Corrected Monte Carlo Method

3. Potential of Enhancement Mode In0.65Ga0.35As/InAs/In0.65Ga0.35As HEMTs for Using in High-Speed and Low-Power Logic Applications

4. First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process

5. T. Takahashi M. Sato K. Makiyama Y. Nakasha N. Hara T. Iwai 2015 238 240

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1. Small signal and noise analysis of T-gate HEMT with polarization doped buffer for LNAs;Micro and Nanostructures;2023-08

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