Design and characterization of (Al, C)/p-Ge/p-BN/C isotype resonant electronic devices-Reference-Cited by-同舟云学术

Design and characterization of (Al, C)/p-Ge/p-BN/C isotype resonant electronic devices

Published:2015-05-19 Issue:8 Volume:212 Page:1845-1850
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Al Garni S. E.¹,Qasrawi A. F.²³

Affiliation:

1. Department of Physics, Sciences Faculty for Girls; King Abdulaziz University; Jeddah Saudi Arabia

2. Department of Physics; Arab-American University; Jenin, West Bank Palestine

3. Faculty of Engineering, Group of Physics; Atilim University; 06836 Ankara Turkey

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Epitaxial growth and demonstration of hexagonal BN/AlGaN p-n junctions for deep ultraviolet photonics

2. Monolayer Hexagonal Boron Nitride Films with Large Domain Size and Clean Interface for Enhancing the Mobility of Graphene‐Based Field‐Effect Transistors

3. Boron Nitride–Graphene Nanocapacitor and the Origins of Anomalous Size-Dependent Increase of Capacitance

4. High performance vertical tunneling diodes using graphene/hexagonal boron nitride/graphene hetero-structure

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