Recent Advances in InAs Quantum Dot Lasers Grown on On‐Axis (001) Silicon by Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

Recent Advances in InAs Quantum Dot Lasers Grown on On‐Axis (001) Silicon by Molecular Beam Epitaxy

Published:2018-12-28 Issue:1 Volume:216 Page:1800602
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Jung Daehwan¹^ORCID,Norman Justin²^ORCID,Wan Yating¹^ORCID,Liu Songtao³^ORCID,Herrick Robert⁴,Selvidge Jennifer²,Mukherjee Kunal²,Gossard Arthur C.¹²³,Bowers John E.¹²³

Affiliation:

1. Institute for Energy Efficiency, University of CaliforniaSanta BarbaraUCSB 93106CAUSA

2. Materials Department, University of CaliforniaSanta BarbaraUCSB 93106CAUSA

3. Electrical and Computer Engineering, University of CaliforniaSanta BarbaraUCSB 93106CAUSA

4. Intel CorporationSanta ClaraIntel 95054CAUSA

Funder

Advanced Research Projects Agency - Energy

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201800602

Reference25 articles.

1. Roadmap on silicon photonics

2. Recent advances in mid infrared (3-5µm) Quantum Cascade Lasers

3. Y.Arakawa 2016 21st Optoelectronics and Communications Conference (OECC) Held Jointly With 2016 International Conference on Photonics in Switching (Ps)2016.

4. Quantum dot lasers for silicon photonics [Invited]

5. High efficiency low threshold current 1.3 μm InAs quantum dot lasers on on-axis (001) GaP/Si

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