Composition at the CuInSe2/ZnO interface: Copper depletion induced by diethyl-zinc-Reference-Cited by-同舟云学术

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Composition at the CuInSe2/ZnO interface: Copper depletion induced by diethyl-zinc

Published:2014-02-13 Issue:9 Volume:211 Page:1966-1971
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Hofmann A.¹,Janocha E.¹,Kelleter F.¹,Pettenkofer C.¹

Affiliation:

1. Helmholtz-Zentrum-Berlin, Institute for Silicon Photovoltaics; Albert-Einstein-Str. 15 12489 Berlin Germany

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference33 articles.

1. Wide-Gap Chalcopyrites

2. Characterisation and modelling of chalcopyrite solar cells

3. Electronic properties of Cu(In,Ga)Se 2 heterojunction solar cells-recent achievements, current understanding, and future challenges

4. Flat conduction-band alignment at the CdS/CuInSe2 thin-film solar-cell heterojunction

5. Prospects for in situ junction formation in CuInSe2 based solar cells

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