Evolution of Electrically Active Defects in n-GaN During Heat Treatment Typical for Ohmic Contact Formation-Reference-Cited by-同舟云学术

Evolution of Electrically Active Defects in n-GaN During Heat Treatment Typical for Ohmic Contact Formation

Published:2017-10-17 Issue:9 Volume:215 Page:1700516
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Boturchuk Ievgen¹^ORCID,Scheffler Leopold²,Larsen Arne Nylandsted¹²,Julsgaard Brian¹²

Affiliation:

1. Interdisciplinary Nanoscience Center (iNANO), Aarhus University; Gustav Wieds Vej 14 8000 Aarhus C Denmark

2. Department of Physics and Astronomy, Aarhus University; Ny Munkegade 120 8000 Aarhus C Denmark

Funder

Innovation Fund Denmark

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference33 articles.

1. Ohmic contacts to Gallium Nitride materials

2. Thermodynamics and Phase Stability in the Ga–N System

3. Deep traps in GaN-based structures as affecting the performance of GaN devices

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