Reduced porosity in metal-assisted chemical etching of vertical Si nanowire arrays by an induced magnetic field-Reference-Cited by-同舟云学术

Reduced porosity in metal-assisted chemical etching of vertical Si nanowire arrays by an induced magnetic field

Published:2016-02-08 Issue:6 Volume:213 Page:1572-1576
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Yun Seokhun¹²,Choi Chan Ho³,Patil Dipali S.³,Kim Doo Gun¹,Lee Taikjin⁴,Song Gwang Yeom⁵,Heo Jaeyeong⁵,Shin Jae Cheol³

Affiliation:

1. Laser Tech Research Center; Korea Photonics Technology Institute; Gwangju 500-779 South Korea

2. Department of Electronics and Computer Engineering; Chonnam National University; Gwangju 500-757 South Korea

3. Department of Physics; Yeungnam University; Gyeongsan 712-749 South Korea

4. Sensor System Research Center; Korea Institute of Science and Technology (KIST); Seoul 136-791 South Korea

5. Department of Materials Science and Engineering, and Optoelectronics Convergence Research Center; Chonnam National University; Gwangju 500-757 South Korea

Funder

Ministry of Education, Science and Technology

Korea government MOTIE

Korea government (MSIP)

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Erratum: Enhanced absorption and carrier collection in Si wire arrays for photovoltaic applications

2. High-performance lithium battery anodes using silicon nanowires

3. A Perspective on Nanowire Photodetectors: Current Status, Future Challenges, and Opportunities

4. Silicon nanowires as efficient thermoelectric materials

5. Wafer-scale patterning of sub-40 nm diameter and high aspect ratio (>50:1) silicon pillar arrays by nanoimprint and etching

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