Techniques to reduce thermal resistance in flip-chip GaN-based VCSELs (Phys. Status Solidi A 8∕2017)-Reference-Cited by-同舟云学术

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Techniques to reduce thermal resistance in flip-chip GaN-based VCSELs (Phys. Status Solidi A 8∕2017)

Published:2017-08 Issue:8 Volume:214 Page:1770149
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Mishkat-Ul-Masabih Saadat¹,Leonard John²,Cohen Daniel²,Nakamura Shuji²,Feezell Daniel¹

Affiliation:

1. Department of Electrical & Computer Engineering; University of New Mexico; 1313 Goddard SE Albuquerque NM 87106 USA

2. Materials Department; University of California; Santa Barbara, Engineering II Building 1355 Santa Barbara CA 93106 USA

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Quantum barriers with a polarization self-screening effect for GaN-based VCSELs to increase the electron-hole stimulated recombination and output performance;Optical Materials Express;2021-11-05

2. Study on electronic blocking layer of 403 nm GaN-based vertical cavity surface emitting lasers;Optoelectronics Letters;2019-11

3. Nanoporous distributed Bragg reflectors on free-standing nonpolar m-plane GaN;Applied Physics Letters;2018-01-22

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