Excellent silicon surface passivation using dimethylaluminium chloride as Al source for atomic layer deposited Al2O3-Reference-Cited by-同舟云学术

Excellent silicon surface passivation using dimethylaluminium chloride as Al source for atomic layer deposited Al2O3

Published:2015-03-16 Issue:8 Volume:212 Page:1795-1799
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Li Shuo¹²,Bao Yameng¹,Laitinen Mikko³,Sajavaara Timo³,Putkonen Matti⁴,Savin Hele¹

Affiliation:

1. Department of Micro and Nanosciences; Aalto University; Tietotie 3 Espoo 02150 Finland

2. Beneq Oy; Olarinluoma 9 Espoo 02200 Finland

3. Department of Physics; Accelerator Laboratory; University of Jyvaskylä; P.O. Box 35 Jyväskylä 40014 Finland

4. VTT Technical Research Centre of Finland; P.O. Box 1000, 02044 VTT Espoo Finland

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3

2. Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells

3. Plasma-enhanced and thermal atomic layer deposition of Al2O3using dimethylaluminum isopropoxide, [Al(CH3)2(μ-OiPr)]2, as an alternative aluminum precursor

4. Vapour-liquid equilibrium of organoaluminium compounds

5. Synthesis of trimethylaluminium

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