Control of Dynamic Properties of InAs/InAlGaAs/InP Hybrid Quantum Well-Quantum Dot Structures Designed as Active Parts of 1.55 μm Emitting Lasers-Reference-Cited by-同舟云学术

Control of Dynamic Properties of InAs/InAlGaAs/InP Hybrid Quantum Well-Quantum Dot Structures Designed as Active Parts of 1.55 μm Emitting Lasers

Published:2017-11-13 Issue:4 Volume:215 Page:1700455
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Rudno-Rudziński Wojciech¹,Syperek Marcin¹^ORCID,Maryński Aleksander¹^ORCID,Andrzejewski Janusz¹,Misiewicz Jan¹^ORCID,Bauer Sven²,Sichkovskyi Vitalii I.²,Reithmaier Johann P.²^ORCID,Schowalter Marco³^ORCID,Gerken Beeke³,Rosenauer Andreas³^ORCID,Sęk Grzegorz¹

Affiliation:

1. Faculty of Fundamental Problems of Technology Department of Experimental Physics Wrocław University of Science and Technology; St. Wyspiańskiego 27 50-370 Wrocław Poland

2. Technische Physik Institute of Nanostructure Technology and Analytics, CINSaT University of Kassel; Heinrich Plett-Str. 40 D-34132 Kassel Germany

3. Institute of Solid State Physics Universität Bremen; Otto-Hahn-Allee 1 28359 Bremen Germany

Funder

Narodowym Centrum Nauki

Deutsche Forschungsgemeinschaft

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference36 articles.

1. High-speed 1.3μm tunnel injection quantum-dot lasers

2. DC and Dynamic Characteristics of P-Doped and Tunnel Injection 1.65-$\mu{\hbox {m}}$ InAs Quantum-Dash Lasers Grown on InP (001)

3. The QD-Flash: a quantum dot-based memory device

4. Tuning the dynamic properties of electrons between a quantum well and quantum dots

5. Enhanced current injection from a quantum well to a quantum dash in magnetic field

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