The Effect of Introducing Optical Blanking on GaN Epitaxy Using Pulsed Laser Deposition Technology-Reference-Cited by-同舟云学术

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The Effect of Introducing Optical Blanking on GaN Epitaxy Using Pulsed Laser Deposition Technology

Published:2019-09-09 Issue:3 Volume:217 Page:1900517
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Kodama Kazuki¹^ORCID,Ueda Daisuke¹

Affiliation:

1. Center of Low-Temperature Plasma SciencesNagoya University Furo-cho, Chikusa-ku Nagoya 464-8603 Aichi Japan

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900517

Reference16 articles.

1. GaN-on-Si Power Technology: Devices and Applications

2. Low-Loss and High-Voltage III-Nitride Transistors for Power Switching Applications

3. Investigations of 600-V GaN HEMT and GaN Diode for Power Converter Applications

4. GaN-Based RF Power Devices and Amplifiers

5. Recent advances in GaN transistors for future emerging applications

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Selective area doping of GaN toward high-power applications;Journal of Physics D: Applied Physics;2023-06-13

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