Theory of a carbon‐oxygen‐hydrogen recombination center in n‐type Si-Reference-Cited by-同舟云学术

Theory of a carbon‐oxygen‐hydrogen recombination center in n‐type Si

Published:2017-06-19 Issue:7 Volume:214 Page:1700309
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Santos Paulo¹,Coutinho José¹,Öberg Sven²,Vaqueiro‐Contreras Michelle³,Markevich Vladimir P.³,Halsall Matthew P.³,Peaker Anthony R.³

Affiliation:

1. Department of Physics and I3NUniversity of AveiroCampus Santiago3810‐193 AveiroPortugal

2. Department of Engineering Sciences and MathematicsLuleå University of TechnologySE‐97187 LuleåSweden

3. Photon Science InstituteUniversity of ManchesterM13 9PLUK

Funder

Fundação para a Ciência e a Tecnologia

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201700309

Reference27 articles.

1. Early Stages of Oxygen Precipitation in Silicon

2. Light impurities (O, H, C, N) in silicon

3. Defect passivation of industrial multicrystalline solar cells based on PECVD silicon nitride

4. Vibrational absorption of carbon in silicon

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