Investigation of 1.3 μm AlGaInAs multi-quantum wells for electro-absorption modulated laser-Reference-Cited by-同舟云学术

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Investigation of 1.3 μm AlGaInAs multi-quantum wells for electro-absorption modulated laser

Published:2016-05-23 Issue:10 Volume:213 Page:2699-2703
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Binet Guillaume¹²,Decobert Jean¹,Lagay Nadine¹,Chimot Nicolas¹,Kazmierski Christophe¹

Affiliation:

1. III-V Lab.; Route de Nozay; 91461 Marcoussis France

2. Institut Jean le Rond d'Alembert; Sorbonne Universités; UPMC Univ. Paris 06, CNRS, UMR 7190 75005 Paris France

Funder

Ministry of Industry STEAM project

Nano2017 program

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. 25 Gbaud/s 4‐PAM (50 Gbit/s) modulation and 10 km SMF transmission with 1.3 μm InGaAlAs‐based DML

2. H. Klein C. Bornholdt G. Przyrembel A. Sigmund W.-D. Molzow H.-G. Bach M. Moehrle

3. Mask pattern interference in AlGaInAs selective area metal-organic vapor-phase epitaxy: Experimental and modeling analysis

4. Phase-shift-keying and on-off-keying with improved performances using electroabsorption modulators with interferometric effects

5. H. Mardoyan O. Bertran-Pardo P. Jennevé G. De Valicourt M. A. Mestre S. Bigo C. Kazmierski N. Chimot A. G. Steffan J. Honecker R. Zhang P. Runge A. Richter C. Arellano A. Ortega-Monux I. Molina-Fernandez 2014

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