On the recombination behavior of p+-type polysilicon on oxide junctions deposited by different methods on textured and planar surfaces-Reference-Cited by-同舟云学术

On the recombination behavior of p+-type polysilicon on oxide junctions deposited by different methods on textured and planar surfaces

Published:2017-05-08 Issue:8 Volume:214 Page:1700058
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Larionova Yevgeniya¹,Turcu Mircea¹,Reiter Sina¹,Brendel Rolf¹²,Tetzlaff Dominic³,Krügener Jan³,Wietler Tobias³,Höhne Uwe⁴,Kähler Jan-Dirk⁴,Peibst Robby¹³

Affiliation:

1. Institute for Solar Energy Research Hamelin; Am Ohrberg 1 D-31860 Emmerthal Germany

2. Institute for Solid State Physics; Leibniz Universität Hannover; Appelstr. 4 D-30167 Hannover Germany

3. Institute of Electronic Materials and Devices; Leibniz Universität Hannover; Schneiderberg 32 D-30167 Hannover Germany

4. centrotherm pv AG; Vahrenwalder Str. 269A D-30179 Hannover Germany

Funder

Bundesministerium für Wirtschaft und Energie

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201700058/fullpdf

Reference29 articles.

1. Achievement of More Than 25% Conversion Efficiency With Crystalline Silicon Heterojunction Solar Cell

2. hhttp://www.kaneka.co.jp/kaneka-e/images/topics/1473811995/1473811995_101.pdf

3. Ion Implantation for Poly-Si Passivated Back-Junction Back-Contacted Solar Cells

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