Measurement and analysis of thermal conductivity of isotopically controlled silicon layers by time-resolved X-ray scattering-Reference-Cited by-同舟云学术

Measurement and analysis of thermal conductivity of isotopically controlled silicon layers by time-resolved X-ray scattering

Published:2016-06-30 Issue:11 Volume:213 Page:3020-3028
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Eon S.¹,Frieling R.¹,Plech A.²,Bracht H.¹

Affiliation:

1. Institute for Materials Physics; University of Münster; 48149 Münster Germany

2. Institute for Photon Science and Synchrotron Radiation (IPS); 76344 Eggenstein-Leopoldshafen Germany

Funder

Deutsche Forschungsgemeinschaft

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference55 articles.

1. Effect of quantum-well structures on the thermoelectric figure of merit

2. Thin-film thermoelectric devices with high room-temperature figures of merit

3. Enhanced thermoelectric performance of rough silicon nanowires

4. Thermal conductivity of individual silicon nanowires

5. Silicon nanowires as efficient thermoelectric materials

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