Thermal Stability of Defect‐Enhanced Ge on Si Quantum Dot Luminescence upon Millisecond Flash Lamp Annealing-Reference-Cited by-同舟云学术

Thermal Stability of Defect‐Enhanced Ge on Si Quantum Dot Luminescence upon Millisecond Flash Lamp Annealing

Published:2019-08-07 Issue:17 Volume:216 Page:1900307
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Spindlberger Lukas¹^ORCID,Prucnal Slawomir²,Aberl Johannes¹,Brehm Moritz¹

Affiliation:

1. Institute of Semiconductor and Solid State PhysicsJohannes Kepler University Linz Altenberger Straße 69 Linz 4040 Austria

2. Institute of Ion Beam Physics and Materials ResearchHelmholtz-Zentrum Dresden-Rossendorf Bautzner Landstraße 400 Dresden 01328 Germany

Funder

Austrian Science Fund

Horizon 2020 Framework Programme

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900307

Reference27 articles.

1. Impact of annealing on the formation and mitigation of carrier-induced defects in multi-crystalline silicon

2. Engineered Coalescence by Annealing 3D Ge Microstructures into High-Quality Suspended Layers on Si

3. Hall mobility enhancement caused by annealing of Si0.2Ge0.8/Si0.7Ge0.3/Si(001) p-type modulation-doped heterostructures

4. Silicon, Germanium, and Their Alloys

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