Self-consistent simulation of two-dimensional electron gas characteristics of a novel (InxAl1-xN/AlN) MQWs/InN/GaN heterostructure-Reference-Cited by-同舟云学术

Self-consistent simulation of two-dimensional electron gas characteristics of a novel (InxAl1-xN/AlN) MQWs/InN/GaN heterostructure

Published:2016-02-03 Issue:5 Volume:213 Page:1263-1268
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Li Wei¹,Wang Quan¹²,Wang Cuimei¹,Yin Haibo¹,Yan Junda¹,Gong Jiamin²,Li Baiquan³,Wang Xiaoliang¹⁴,Wang Zhanguo¹

Affiliation:

1. KeyLab of Semiconductor Materials Science, Institute of Semiconductors; Chinese Academy of Sciences; Beijing P.R. China

2. School of Electronic Engineering; Xi'an University of Posts and Telecommunications; Xi'an P.R. China

3. Beijing Huajin Chuangwei Technology Co., Ltd.; Beijing P.R. China

4. Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices; Beijing P.R. China

Funder

Knowledge Innovation Project of the Chinese Academy of Sciences

National Nature Sciences Foundation of China

National Basic Research Program of China

National Science and Technology Major Project of China

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference30 articles.

1. Improving the Linearity of GaN HEMTs by Optimizing Epitaxial Structure

2. Theoretical limit estimation of lateral wide band-gap semiconductor power-switching device

3. High-current AlGaN/GaN high electron mobility transistors achieved by selective-area growth via plasma-assisted molecular beam epitaxy

4. Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers

5. Very low sheet resistance and Shubnikov–de-Haas oscillations in two-dimensional electron gases at ultrathin binary AlN∕GaN heterojunctions

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