Seed layer synthesis effect on the concentration of interface defects and emission spectra of ZnO nanorods/p-GaN light-emitting diode-Reference-Cited by-同舟云学术

Seed layer synthesis effect on the concentration of interface defects and emission spectra of ZnO nanorods/p-GaN light-emitting diode

Published:2016-09-19 Issue:1 Volume:214 Page:1600333
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Alnoor Hatim¹,Pozina Galia²,Willander Magnus¹,Nur Omer¹

Affiliation:

1. Department of Science and Technology (ITN); Linköping University; 60174 Norrköping Sweden

2. Department of Physics; Chemistry and Biology (IFM); Linköping University; 58381 Linköping Sweden

Funder

Swedish Government Strategic Research Area in Materials Science on Functional Materials

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. General Route to Vertical ZnO Nanowire Arrays Using Textured ZnO Seeds

2. A comprehensive review of ZnO materials and devices

3. Zinc oxide nanorod based photonic devices: recent progress in growth, light emitting diodes and lasers

4. GaN/ZnO nanorod light emitting diodes with different emission spectra

5. Ordered Nanowire Array Blue/Near-UV Light Emitting Diodes

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