Interface dislocations in In x Ga1-x N/GaN heterostructures-Reference-Cited by-同舟云学术

Interface dislocations in In x Ga1-x N/GaN heterostructures

Published:2016-11-02 Issue:4 Volume:214 Page:1600442
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Li Q. T.¹,Minj A.¹,Chauvat M. P.¹,Chen J.¹,Ruterana P.¹

Affiliation:

1. CIMAP UMR 6252; CNRS ENSICAEN UCBN CEA; 6 Boulevard du Maréchal Juin; 14050 Caen Cedex France

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201600442/fullpdf

Reference37 articles.

1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

2. Nitride-based semiconductors for blue and green light-emitting devices

3. Superior radiation resistance of In1−xGaxN alloys: Full-solar-spectrum photovoltaic material system

4. Design and characterization of GaN∕InGaN solar cells

5. Emission Mechanisms of LEDs and LDs

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