Epitaxial lateral overgrowth of Ga x In1 − x P toward direct Ga x In1 − x P/Si heterojunction-Reference-Cited by-同舟云学术

Epitaxial lateral overgrowth of Ga x In1 − x P toward direct Ga x In1 − x P/Si heterojunction

Published:2017-02-22 Issue:3 Volume:214 Page:1600631
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Omanakuttan Giriprasanth¹,Stergiakis Stamoulis¹,Sahgal Abhishek¹²,Sychugov Ilya¹,Lourdudoss Sebastian¹,Sun Yan-Ting¹

Affiliation:

1. Department of Materials and Nano Physics, School of Information and Communication Technology; Royal Institute of Technology-KTH; Electrum 229 164 40 Kista Sweden

2. Department of Physics; Indian Institute of Technology Delhi; New Delhi 110016 India

Funder

Swedish Energy Agency

Erasmus Mundus India4EUII programme

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

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5. Study of planar defect filtering in InP grown on Si by epitaxial lateral overgrowth

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