Electron irradiation of near‐UV GaN/InGaN light emitting diodes-Reference-Cited by-同舟云学术

Electron irradiation of near‐UV GaN/InGaN light emitting diodes

Published:2017-07-21 Issue:10 Volume:214 Page:1700372
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Lee In‐Hwan¹,Polyakov Alexander Y.²,Smirnov N. B.²,Shchemerov I. V.²,Shmidt N. M.³,Tal'nishnih N. A.⁴,Shabunina E. I.³,Cho Han‐Su¹,Hwang Sung‐Min⁵,Zinovyev R. A.²,Didenko S. I.²,Lagov P. B.²,Pearton S. J.⁶

Affiliation:

1. Department of Materials Science and EngineeringKorea UniversitySeoul02841Korea

2. National University of Science and Technology MISiS4 Leninsky Ave.Moscow194017Russia

3. Ioffe Physico‐Technical Institute26 Polytekhnicheskaya Str.St. Petersburg194021Russia

4. Submicron Heterostructures for Microelectronics Research and Engineering CenterSt. Petersburg194021Russia

5. Soft‐Epi, Inc.Opo‐ro 240, Gwangju‐siGyeonggi‐do464‐892South Korea

6. Department of Materials Science and EngineeringUniversity of FloridaGainesvilleFL32611USA

Funder

Ministry of Education and Science of the Russian Federation

National Research Foundation of Korea

Defense Threat Reduction Agency

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201700372

Reference25 articles.

1. III-Nitride Ultraviolet Emitters

2. Development and future of ultraviolet light-emitting diodes: UV-LED will replace the UV lamp

3. Performance improvement of GaN-based near-UV LEDs with InGaN/AlGaN superlattices strain relief layer and AlGaN barrier

4. Degradation of InGaN-based laser diodes analyzed by means of electrical and optical measurements

5. Investigation of the deep level involved in InGaN laser degradation by deep level transient spectroscopy

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