Effect of Small-Angle Grain Boundary on the Mechanical Properties in Direct Silicon Bonded Wafer-Reference-Cited by-同舟云学术

Effect of Small-Angle Grain Boundary on the Mechanical Properties in Direct Silicon Bonded Wafer

Published:2018-05-17 Issue:14 Volume:215 Page:1800118
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Wang Peng¹²,Cui Can¹,Yu Xuegong²,Li Zhonglan²,Yang Deren²

Affiliation:

1. Center for Optoelectronic Materials and Devices; Department of Physics; Zhejiang Sci-Tech University; Hangzhou 310018 P.R. China

2. State Key Lab of Silicon Materials; School of Materials Science and Engineering; Zhejiang University; Hangzhou 310027 P.R. China

Funder

National Natural Science Foundation of China

Science Challenge Project

Visiting Scholar Foundation of State Key lab of Silicon Materials

Zhejiang Sci-Tech University

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201800118/fullpdf

Reference41 articles.

1. Photovoltaic materials: Present efficiencies and future challenges

2. Influence of dislocation density on recombination at grain boundaries in multicrystalline silicon

3. Trapping of minority carriers in multicrystalline silicon

4. Spatially resolved defect diagnostics in multicrystalline silicon for solar cells

5. Spatially resolved modeling of the combined effect of dislocations and grain boundaries on minority carrier lifetime in multicrystalline silicon

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