Spectral measurements of picosecond photoconductivity in terahertz detectors made from low temperature grown GaAs and GaInAs-Reference-Cited by-同舟云学术

Spectral measurements of picosecond photoconductivity in terahertz detectors made from low temperature grown GaAs and GaInAs

Published:2015-04-29 Issue:9 Volume:212 Page:2080-2084
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Adamonis Juozas¹,Arlauskas Andrius¹,Krotkus Arūnas¹

Affiliation:

1. Center for Physical Sciences and Technology; A. Goštauto 11 01108 Vilnius Lithuania

Funder

Research Council of Lithuania

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201431824/fullpdf

Reference23 articles.

1. Semi-insulating semiconductor heterostructures: Optoelectronic properties and applications

2. Infrared absorption of deep defects in molecular-beam-epitaxial GaAs layers grown at 200 °C: Observation of anEL2-like defect

3. Above band gap absorption spectra of the arsenic antisite defect in low temperature grown GaAs and AlGaAs

4. Two-trap model for carrier lifetime and resistivity behavior in partially annealedGaAsgrown at low temperature

5. Terahertz time-domain-spectroscopy system using a 1 micron wavelength laser and photoconductive components made from low-temperature-grown GaAs

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