Improvement of dislocation density in thick CVD single crystal diamond films by coupling H2 /O2 plasma etching and chemo-mechanical or ICP treatment of HPHT substrates-Reference-Cited by-同舟云学术

Improvement of dislocation density in thick CVD single crystal diamond films by coupling H2 /O2 plasma etching and chemo-mechanical or ICP treatment of HPHT substrates

Published:2014-04-28 Issue:10 Volume:211 Page:2264-2267
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Achard J.¹,Tallaire A.¹,Mille V.¹,Naamoun M.¹,Brinza O.¹,Boussadi A.¹,William L.¹,Gicquel A.¹

Affiliation:

1. Laboratoire des Sciences des Procédés et des Matériaux (CNRS UPR 3407); Université Paris 13; Sorbonne Paris Cité; 93430 Villetaneuse France

Funder

French ANR projects CROISADD No. ANR-11-ASTR-020, MONODIAM-HE

French FUI project DIAMONIX

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201431181/fullpdf

Reference16 articles.

1. Control of surface and bulk crystalline quality in single crystal diamond grown by chemical vapour deposition

2. Thick boron doped diamond single crystals for high power electronics

3. Non-destructive detection of killer defects of diamond Schottky barrier diodes

4. Growth strategy for controlling dislocation densities and crystal morphologies of single crystal diamond by using pyramidal-shape substrates

5. M. Naamoun A. Tallaire J. Achard P. Doppelt A. Gicquel

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