Oxygen diffusion process in a Ba0.96La0.04SnO3thin film on SrTiO3(001) substrate as investigated by time-dependent Hall effect measurements-Reference-Cited by-同舟云学术

Oxygen diffusion process in a Ba0.96La0.04SnO3thin film on SrTiO3(001) substrate as investigated by time-dependent Hall effect measurements

Published:2015-05-12 Issue:7 Volume:212 Page:1487-1493
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Lee Woong-Jhae¹,Kim Hyung Joon¹,Sohn Egon¹,Kim Hoon Min²,Kim Tai Hoon¹,Char Kookrin²,Kim Jin Hyeok³,Kim Kee Hoon¹²

Affiliation:

1. Department of Physics and Astronomy; Center for Novel States of Complex Materials Research; Seoul National University; Seoul 151-747 Republic of Korea

2. Institute of Applied Physics; Seoul National University; Seoul 151-747 Republic of Korea

3. Department of Materials Science and Engineering; Chonnam National University; Gwangju 500-757 Republic of Korea

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference43 articles.

1. High Mobility in a Stable Transparent Perovskite Oxide

2. Physical properties of transparent perovskite oxides (Ba,La)SnO3with high electrical mobility at room temperature

3. High carrier mobility in transparent Ba1−xLaxSnO3 crystals with a wide band gap

4. Dramatic mobility enhancements in doped SrTiO3 thin films by defect management

5. Anisotropy of oxygen tracer diffusion in single-crystalYBa2Cu3O7−δ

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