Growth of silicon nanowires by sputtering and evaporation methods-Reference-Cited by-同舟云学术

Growth of silicon nanowires by sputtering and evaporation methods

Published:2013-04-03 Issue:7 Volume:210 Page:1429-1432
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Nguyen Thuy Thi¹,Vuong Anh Xuan¹,Mai Luan Duc¹,Nguyen Tuan Hoang¹,Nguyen Tu²,Nguyen Chien Duc,Nguyen Lam Huu

Affiliation:

1. School of Engineering Physics; Hanoi University of Science and Technology; 1 Dai Co Viet; 10000 Hanoi, Vietnam

2. Advanced Institute of Science and Technology; Hanoi University of Science and Technology; 1 Dai Co Viet; 10000 Hanoi, Vietnam

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Silicon nanowires as chemical sensors

2. Synthesis and characterization of silicon nanowires using tin catalyst for solar cells application

3. Oxide-Assisted Growth of Semiconducting Nanowires

4. Morphology of Si nanowires synthesized by high-temperature laser ablation

5. Long Si nanowires with millimeter-scale length by modified thermal evaporation from Si powder

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