Dynamically Induced Large‐Scale, Selective, and Vertical Structure Growth of MoS 2 Nanosheets-Reference-Cited by-同舟云学术

Dynamically Induced Large‐Scale, Selective, and Vertical Structure Growth of MoS 2 Nanosheets

Published:2021-10-28 Issue: Volume: Page:2101105
ISSN:1438-1656
Container-title:Advanced Engineering Materials
language:en
Short-container-title:Adv Eng Mater

Author:

Zhang Kun¹²^ORCID,Feng Shuanglong²,Kang Shuai²,Wu Yutong¹²,Wang Qingshan³,Tao Zhiyong⁴,Fan Yaxian⁴,Lu Wenqiang²

Affiliation:

1. Key Laboratory of In-Fiber Integrated Optics Ministry Education of China Harbin Engineering University Harbin 150001 P. R. China

2. Chongqing Key Laboratory of Multi-Scale Manufacturing Technology Chongqing Institute of Green and Intelligent Technology Chinese Academy of Sciences Chongqing 400714 P. R. China

3. College of Mechanical Engineering Chongqing University Chongqing 400714 P. R. China

4. Guangxi Key Laboratory of Wireless Wideband Communication and Signal Processing Guilin 541004 China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adem.202101105

Reference49 articles.

1. High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects

2. Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

3. D.Jariwala V. K.Sangwan C.‐C.Wu P. L.Prabhumirashi M. L.Geier T. J.Marks L. J.Lauhon M. C.Hersam inProc. Natl. Acad. Sci. U. S. A.2013 Vol.110 p.18076.

4. Single-layer MoS2 transistors

5. High-Gain Phototransistors Based on a CVD MoS2Monolayer

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